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| Datasheet File OCR Text: |
| Formosa MS LL4150 High-speed switching diode Features 1. 2. 3. Small surface mounting type High reliability High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25? Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward current Average forward current Power dissipation Junction temperature Storage temperature range Test Conditions Type Symbol VRRM VR IFSM IF IFAV PV Tj Tstg Value 50 40 4 600 300 500 175 -65~+175 Unit V V A mA mA mW ? ? tp=1 s VR =0 Maximum Thermal Resistance Tj=25? Parameter Junction ambient Test Conditions on PC board 50mmx 50mmx 1.6mm Symbol RthJA Value 500 Unit K/W Formosa MS 1 Formosa MS LL4150 Electrical Characteristics Tj=25? Parameter Forward voltage Test Conditions IF =1mA IF =10mA IF =50mA IF =100mA IF =200mA VR =50V VR =50V, Tj=150? VR =0, f=1MHz, VHF =50mV IF = IR =10... 100mA, iR =1mA, RL=100O Type Symbol VF VF VF VF VF IR IR CD trr Min 0.54 0.66 0.76 0.82 0.87 Typ Max 0.62 0.74 0.86 0.92 1.0 100 100 2.5 4 Unit V V V V V nA A pF ns Reverse current Diode capacitance Reverse recovery time Dimensions in mm Cathode band Glass Case Mini Melf / SOD 80 JEDEC DO 213 AA Formosa MS 2 |
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